MT29F1G08ABAEAWP:E

MT29F1G08ABAEAWP:E is a NAND flash device that includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, addresses, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip-enabled signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status.

• 1Gb density, 8-bit device width, SLC level, 1 die, nCE, RnB and I/O Channel
• Operating voltage range from 1.8V (1.7 to 1.95V), feature set E
• Asynchronous only
• Open NAND Flash Interface (ONFI) 1.0-compliant, single-level cell (SLC) technology
• Page size x8: 2112 bytes (2048 + 64 bytes), page size x16: 1056 words (1024 + 32 words)
• Block size: 64 pages (128K + 4K bytes), device size: 1Gb: 1024 blocks
• Asynchronous I/O performance, tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Read page: 25µs, program page: 200µs (TYP, 3.3V and 1.8V), erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol, program page cache mode, read page cache mode
• 48-pin TSOP Type 1 package, commercial operating temperature range from 0°C to +70°C