MPQ1925HR-P

MPQ1925 is a high-frequency, N-channel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are independently controlled, and are matched with less than 5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET under-voltage lockout (UVLO) protection forces the outputs low. The MPQ1925 also features an integrated bootstrap (BST) diode to reduce the external component count. The MPQ1925 is available in a QFN-8 (4mmx4mm) package. Applications include motor drivers, telecommunication half-bridge power supplies, avionics DC/DC converters, two-switch forward converters, active-clamp forward converters.

• Drives an N-channel MOSFET half-bridge
• 115V bootstrap voltage (VBST) range, on-chip bootstrap (BST) diode
• Typical 20ns propagation delay, <lt/>5ns gate driver matching time
• Drives a 2.2nF load with a 15ns rise time and 10ns fall time at 12V VDD
• Transistor-to-transistor logic (TTL) compatible input
• <lt/>150µA quiescent current (IQ)
• High-side MOSFET (HS-FET) and low side MOSFET (LS-FET) undervoltage lockout (UVLO) protection

Notes

MPS part numbers ending in "-P" and "-Z" are the same parts. P & Z only indicates reel size.