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GANB1R2-040QBAZ
Gallium Nitride (GaN) Transistor, 100 A, 60 nC, VQFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
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| Quantity | Price |
|---|---|
| 1+ | HK$90.120 |
| 10+ | HK$61.310 |
| 100+ | HK$47.500 |
| 500+ | HK$46.550 |
| 1000+ | HK$45.600 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
HK$90.12
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGANB1R2-040QBAZ
Order Code4748375
Technical Datasheet
Drain Source Voltage Vds-
Continuous Drain Current Id100A
Drain Source On State Resistance-
Typical Gate Charge60nC
Transistor Case StyleVQFN
Transistor MountingSurface Mount
No. of Pins27Pins
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Drain Source Voltage Vds
-
Drain Source On State Resistance
-
Transistor Case Style
VQFN
No. of Pins
27Pins
Qualification
-
Continuous Drain Current Id
100A
Typical Gate Charge
60nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001