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NXP MRF1K50NR5

RF FET Transistor, 133 V, 2.941 kW, 1.8 MHz, 500 MHz, OM-1230

NXP MRF1K50NR5
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Manufacturer:
NXP NXP
Manufacturer Part No:
MRF1K50NR5
Order Code:
2890602
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Technical Datasheet:
MRF1K50NR5   Datasheet
ECAD / MCAD
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Product Overview

MRF1K50NR5 is a high ruggedness N-channel enhancement mode lateral MOSFET RF power LDMOS transistor. This is a high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Typical application includes laser generation, plasma etching, particle accelerators, MRI and other medical applications, industrial heating, welding and drying systems (industrial, scientific, medical), radio broadcast, VHF TV broadcast (broadcast), VHF omnidirectional range (VOR), HF and VHF communications, weather radar (aerospace), VHF and UHF base stations (mobile radio).
  • High drain-source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Characterized from 30 to 50V for ease of use
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate source voltage for improved Class C operation
  • 1μAdc maximum gate source leakage current (VGS = 5Vdc, VDS = 0Vdc)
  • 133Vdc maximum drain source breakdown voltage (VGS = 0Vdc, ID = 100mAdc)
  • 2.2Vdc typical gate threshold voltage (VDS = 10Vdc, ID = 2130μAdc)
  • OM-1230-4L package, operating junction temperature range from -40 to +225°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information


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Technical Documents (2)

Packaging type Cut Tape

49 In stock Need more?

49 UK stock available for 3-4 business days delivery

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

HK$1,384.58

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