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FDC6303N
Dual MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC6303N
Order Code
Full Reel2985478
Re-Reel1467964RL
Cut Tape1467964
Your Part Number
117,647 In Stock
Need more?
117647 Delivery in 3-4 Business Days(UK stock)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | HK$3.620 |
| 50+ | HK$3.030 |
| 100+ | HK$2.440 |
| 500+ | HK$1.690 |
| 1500+ | HK$1.660 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | HK$1.280 |
| 9000+ | HK$1.170 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6303N
Order Code
Full Reel2985478
Re-Reel1467964RL
Cut Tape1467964
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.45ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
- 8V Gate-source voltage
- 0.68A Continuous drain/output current
- 2A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
680mA
Drain Source On State Resistance N Channel
0.45ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000204