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FDC642P
Power MOSFET, P Channel, 20 V, 4 A, 0.045 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC642PCopy
Manufacturer Standard Lead Time14 weeks
Order Code
Re-Reel2453845RL
Cut Tape2453845
Your Part Number
2,027 In Stock
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2,027 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | HK$7.620 | HK$38.10 |
| Total Price | HK$38.10 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | HK$7.620 |
| 10+ | HK$4.750 |
| 100+ | HK$3.080 |
| 500+ | HK$3.020 |
| 1000+ | HK$2.960 |
| 5000+ | HK$2.900 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC642PCopy
Manufacturer Standard Lead Time14 weeks
Order Code
Re-Reel2453845RL
Cut Tape2453845
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
Drain Source On State Resistance0.045ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC642P is a 2.5V specified single P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. It is suitable for use in load switch and battery protection application.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- 11nC typical low gate charge
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000036