Product Information
Product Overview
The FDS6680AS is a 30V N-channel PowerTrench® SyncFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using monolithic SyncFET technology. This product is general usage and suitable for many different applications.
- Includes SyncFET Schottky body diode
- High performance trench technology for extremely low RDS (on)
- High power and current handing capability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
11.5A
SOIC
10V
2.5mW
150°C
-
30V
0.01ohm
Surface Mount
1.5V
8Pins
-
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate