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FQD12N20LTM
Power MOSFET, N Channel, 200 V, 9 A, 0.28 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQD12N20LTMCopy
Manufacturer Standard Lead Time11 weeks
Order Code
Re-Reel2453433RL
Cut Tape2453433
Your Part Number
8,942 In Stock
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8,942 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | HK$12.670 | HK$12.67 |
| Total Price | HK$12.67 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | HK$12.670 |
| 10+ | HK$7.980 |
| 100+ | HK$5.300 |
| 500+ | HK$4.160 |
| 1000+ | HK$4.080 |
| 5000+ | HK$4.000 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD12N20LTMCopy
Manufacturer Standard Lead Time11 weeks
Order Code
Re-Reel2453433RL
Cut Tape2453433
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9A
Drain Source On State Resistance0.28ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FQD12N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 16nC typical low gate charge
- 17pF typical low Crss
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.28ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00026