Print Page
MMUN2133LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 4.7 kohm, 47 kohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 3000+ | HK$0.181 |
| 9000+ | HK$0.165 |
| 24000+ | HK$0.157 |
| 45000+ | HK$0.154 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
HK$543.00
Add Part No. / Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMUN2133LT1G
Order Code2317905
Technical Datasheet
Transistor PolaritySingle PNP
Digital Transistor PolaritySingle PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage V(br)ceo-50V
Collector Emitter Voltage Max PNP50V
Continuous Collector Current Ic-100mA
Continuous Collector Current100mA
Base Input Resistor R14.7kohm
Resistor Ratio, R1 / R210(Ratio)
Base Emitter Resistor R247kohm
RF Transistor CaseSOT-23
Transistor Case StyleSOT-23
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation400mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMUN2133LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
- Simplifies circuit design
- Reduces board space
- Reduces component count
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Single PNP
Collector Emitter Voltage Max NPN
-
Collector Emitter Voltage Max PNP
50V
Continuous Collector Current
100mA
Resistor Ratio, R1 / R2
10(Ratio)
RF Transistor Case
SOT-23
No. of Pins
3 Pin
Power Dissipation
400mW
DC Current Gain hFE Min
80hFE
Qualification
-
MSL
-
Digital Transistor Polarity
Single PNP
Collector Emitter Voltage V(br)ceo
-50V
Continuous Collector Current Ic
-100mA
Base Input Resistor R1
4.7kohm
Base Emitter Resistor R2
47kohm
Transistor Case Style
SOT-23
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for MMUN2133LT1G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00003