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NTHL080N120SC1A
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 31 A, 1.2 kV, 0.08 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTHL080N120SC1A
Order Code3528502
Product RangeEliteSiC Series
Technical Datasheet
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| Quantity | Price |
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| 1+ | HK$81.220 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHL080N120SC1A
Order Code3528502
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id31A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.7V
Power Dissipation178W
Operating Temperature Max175°C
Product RangeEliteSiC Series
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
NTHL080N120SC1A is an EliteSiC, 80mohm, 1200V, M1, silicon carbide (SiC) MOSFET. The applications include a UPS, DC-DC converter, and boost inverter.
- 100% UIL tested
- Drain-to-source on resistance is 80mohm typ (VGS = 20 V, ID = 20 A, TJ = 25°C)
- Total gate charge is 56nC typ (VGS = -5/20V, VDS = 600V, ID = 20A)
- Output capacitance is 80pF typ (VGS = 0V, f = 1MHz, VDS = 800V)
- Continuous drain-to-source diode forward current is 18A max (VGS = -5V, TJ = 25°C)
- Power dissipation is 178W (TC = 25°C), pulsed drain current is 132A (TA = 25°C)
- Gate resistance is 1.7ohm typ (f = 1MHz)
- Turn-on delay time is 13ns typ (VGS = -5/20V, VDS = 800V, ID = 20A, RG = 4.7, inductive load)
- Total switching loss is 311µJ typ (VGS = -5/20V, VDS = 800V, ID = 20A, RG = 4.7, inductive load)
- TO-247-3LD package, operating junction temperature range from -55 to +175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
31A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
178W
Product Range
EliteSiC Series
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005