AQY212EH

AQY212EH is a GE 1 Form A DIP4-pin type PhotoMos relay with high insulation. It comes equipped with reinforced insulation of 5,000Vrms in a DIP4-Pin type package. This PhotoMOS relay is suitable for controlling low-level analogue signals while maintaining a low on-resistance and low-level off-state leakage current of max 1uA. Along with its small footprint size, especially when compared to mechanical relays, this device contributes to the reduction of PCB board space. It controls low-level analogue signals and features high sensitivity and low on-resistance. Typical application includes modem, telephone equipment, electricity, plant equipment, security equipment, sensing equipment. Standard are UL (E191218), VDE (Nr.40051981).

• High I/O isolation voltage of 5,000V, AC/DC dual use
• Controls low-level analogue signals, high sensitivity and low on-resistance
• Low-level off state leakage current of max 1μA, through hole terminal
• 550mA output load current rating, 60V output load voltage rating
• 1.2mA typ input LED operate current (25°C), 1.25V typ LED dropout voltage (1.14V at IF = 5mA, 25°C)
• 500mW output power dissipation (25°C)
• 1ms typ turn on time (IF = 5mA, 25°C), 0.05ms typ turn off time (IF = 5mA, 25°C)
• 0.8pF typ I/O capacitance (f = 1MHz, VB = 0V, 25°C)
• 1,000Mohm min initial I/O isolation resistance (500VDC, 25°C)
• Operating temperature range from -40°C to +85°C