HFA3096BZ
Bipolar Transistor Array, Complementary NPN and PNP, 8 V, 8 V, 37 mA, 37 mA, 150 mW
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| Quantity | Price |
|---|---|
| 1+ | HK$97.000 |
| 5+ | HK$90.060 |
| 10+ | HK$83.110 |
| 50+ | HK$76.170 |
| 100+ | HK$69.220 |
| 250+ | HK$65.190 |
Product Information
Product Overview
The HFA3096BZ is a NPN-PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
- 3.5dB Noise figure (50Ω) at 1GHz
- <lt/>1pA Collector to collector leakage
- Complete isolation between transistors
Applications
RF Communications, Sensing & Instrumentation, Industrial, Power Management
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Complementary NPN and PNP
8V
37mA
150mW
130hFE
16Pins
125°C
5.5GHz
-
No SVHC (21-Jan-2025)
8V
37mA
150mW
130hFE
SOIC
Surface Mount
8GHz
-
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate