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AG046FLS4FRATCB
Power MOSFET, N Channel, 60 V, 120 A, 3300 µohm, HPLF5060T5LSAH, Surface Mount
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| Quantity | Price |
|---|---|
| 5+ | HK$23.360 |
| 50+ | HK$15.750 |
| 250+ | HK$12.160 |
| 500+ | HK$11.530 |
| 1500+ | HK$10.890 |
| 3000+ | HK$10.360 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
HK$116.80
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoAG046FLS4FRATCBCopy
Order Code5116105
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id120A
Drain Source On State Resistance3300µohm
Transistor Case StyleHPLF5060T5LSAH
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation125W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
HPLF5060T5LSAH
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001