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BUL89
Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 110 W, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBUL89
Order Code1084534
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current12A
Power Dissipation110W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Transition Frequency-
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BUL89 is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Mesa technology for high performance. It uses a hollow emitter structure to enhance switching speeds. It is designed for use in lighting applications and switch-mode power supplies.
- Minimum lot-to-lot spread for reliable operation
- Low base-drive requirements
- Very high switching speed
Applications
Industrial, Power Management, Lighting
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
12A
Transistor Case Style
TO-220
Transition Frequency
-
Product Range
-
Collector Emitter Voltage Max
400V
Power Dissipation
110W
Transistor Mounting
Through Hole
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002