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SCT019W120G3-4AG
Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.026 ohm, HiP247
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT019W120G3-4AG
Order Code4740492
Technical Datasheet
Available to Order
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| Quantity | Price |
|---|---|
| 1+ | HK$188.520 |
| 5+ | HK$178.120 |
| 10+ | HK$167.190 |
| 50+ | HK$161.560 |
Price for:Each
Minimum: 1
Multiple: 1
HK$188.52
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT019W120G3-4AG
Order Code4740492
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id90A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.026ohm
Transistor Case StyleHiP247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation486W
Operating Temperature Max200°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
90A
Drain Source On State Resistance
0.026ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
200°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HiP247
Rds(on) Test Voltage
18V
Power Dissipation
486W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001