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STH4N150-2AG
Power MOSFET, N Channel, 1.5 kV, 2.6 A, 10 ohm, H2PAK, Surface Mount
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| Quantity | Price |
|---|---|
| 3000+ | HK$27.440 |
| 9000+ | HK$24.770 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
HK$82,320.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTH4N150-2AGCopy
Order Code5116015
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id2.6A
Drain Source On State Resistance10ohm
Transistor Case StyleH2PAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation208W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
H2PAK
Rds(on) Test Voltage
10V
Power Dissipation
208W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
1.5kV
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
2Pins
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001