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STP20NM60
Power MOSFET, N Channel, 600 V, 20 A, 0.29 ohm, TO-220, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP20NM60Copy
Manufacturer Standard Lead Time16 weeks
Order Code2344098
Your Part Number
113 In Stock
400 more incoming. You can reserve stock now
113 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | HK$56.090 |
| 10+ | HK$30.790 |
| 100+ | HK$28.220 |
| 500+ | HK$27.110 |
| 1000+ | HK$27.020 |
Price for:Each
Minimum: 1
Multiple: 1
HK$56.09
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP20NM60Copy
Manufacturer Standard Lead Time16 weeks
Order Code2344098
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id20A
Drain Source On State Resistance0.29ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage30V
Gate Source Threshold Voltage Max4V
Power Dissipation192W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STP20NM60 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
- High dV/dt and avalanche capabilities
- Low gate input resistance
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-220
Rds(on) Test Voltage
30V
Power Dissipation
192W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.29ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for STP20NM60
2 Products Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002765