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SI1025X-T1-E3
MOSFET, P, 6-SC-89
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1025X-T1-E3Copy
Order Code1470090
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
Drain Source On State Resistance4ohm
Transistor Case StyleSC-89
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation250mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (15-Jun-2015)
Alternatives for SI1025X-T1-E3
1 Product Found
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
500mA
Transistor Case Style
SC-89
Rds(on) Test Voltage
10V
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jun-2015)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
6Pins
Product Range
-
MSL
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001