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BPW77NA
Phototransistor, 850 nm, 10 °, 250 mW, 3 Pins, TO-18
Image is for illustrative purposes only. Please refer to product description.
262 In Stock
1,000 more incoming. You can reserve stock now
221 Delivery in 3-4 Business Days(UK stock)
41 Delivery in 4-5 Business Days(US stock)
| Quantity | Price |
|---|---|
| 1+ | HK$27.760 |
| 10+ | HK$17.200 |
| 25+ | HK$16.360 |
| 50+ | HK$15.520 |
| 100+ | HK$14.680 |
| 500+ | HK$14.320 |
Price for:Each
Minimum: 1
Multiple: 1
HK$27.76
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The BPW77NA is a Silicon NPN Phototransistor with high radiant sensitivity in hermetically sealed. It is sensitive to visible and near infrared radiation. It is suitable for visible and near infrared radiation.
- High photo sensitivity
- High radiant sensitivity
- Fast response times
- Base terminal connected
- ±10° Angle of half sensitivity
Applications
Sensing & Instrumentation
Technical Specifications
Wavelength Typ
850nm
Power Consumption
250mW
Transistor Case Style
TO-18
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
10°
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454