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IRFI640GPBF
Power MOSFET, N Channel, 200 V, 9.8 A, 0.18 ohm, TO-220FP, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRFI640GPBFCopy
Manufacturer Standard Lead Time24 weeks
Order Code9102450
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| Quantity | Price |
|---|---|
| 1+ | HK$41.810 |
| 10+ | HK$21.640 |
| 100+ | HK$19.670 |
| 500+ | HK$16.250 |
| 1000+ | HK$14.200 |
| 5000+ | HK$13.920 |
Price for:Each
Minimum: 1
Multiple: 1
HK$41.81
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFI640GPBFCopy
Manufacturer Standard Lead Time24 weeks
Order Code9102450
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9.8A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
Product Overview
The IRFI640GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
- 4.8mm Sink to lead creepage distance
- Dynamic dV/dt rating
- Low thermal resistance
Applications
Industrial, Power Management, Commercial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.8A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002