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SIHP100N65E-GE3
Power MOSFET, N Channel, 650 V, 30 A, 0.1 ohm, TO-220AB, Through Hole
46 In Stock
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| Quantity | Price |
|---|---|
| 1+ | HK$90.450 |
| 10+ | HK$62.250 |
| 100+ | HK$46.260 |
| 500+ | HK$44.970 |
| 1000+ | HK$44.080 |
| 5000+ | HK$43.180 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
HK$90.45
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHP100N65E-GE3Copy
Manufacturer Standard Lead Time28 weeks
Order Code4379053
Product RangeE Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id30A
Drain Source On State Resistance0.1ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation208W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE Series
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
208W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
E Series
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001