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| Quantity | Price |
|---|---|
| 1+ | HK$116.210 |
Price for:Each
Minimum: 1
Multiple: 1
HK$116.21
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHS90N65E-GE3
Order Code3650275
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id87A
Drain Source On State Resistance0.029ohm
Transistor Case StyleSuper-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation625W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
87A
Transistor Case Style
Super-247
Rds(on) Test Voltage
10V
Power Dissipation
625W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.029ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001